DOWNLOAD THE FULL PUBLICATION A wideband Gallium Nitride (GaN) HEMT power amplifier (PA) achieving 7.6W output power over 1.1 GHz bandwidth at fo=2.75 GHz is presented. A systematic design and synthesis of wideband low-pass matching networks realizing optimal fundamental impedance is applied. These techniques have produced amplifiers with increased […]
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DOWNLOAD THE FULL PUBLICATION A wideband frequency doubler based on AlGaN/GaN HEMT devices is presented. Rationale for the use of filters to improve the bandwidth performance of a frequency doubler is described. Input and output networks consisting of a harmonic reflector and bandpass filter are designed to provide adequate […]
High power, wideband frequency doubler design using AlGaN/GaN HEMTs and ...
DOWNLOAD THE FULL PUBLICATION Microwave frequency multipliers provide a high performance means of generating microwave and millimeter-wave signals in a wide variety of communications and radar systems. The advances in active microwave frequency multipliers due to improvements in technology and design are significant in providing increased conversion gain, efficiency […]
Advances in Active Microwave Frequency Multipliers
DOWNLOAD THE FULL PUBLICATION An active microwave frequency tripler using an AlGaN/GaN HEMT device is developed. This is the first reported frequency tripler implemented in GaN technology. Design of the frequency tripler is performed using a high-accuracy, multi-harmonic, wideband model which predicts the effects of self-heating and charge-trapping. A […]
Design of a High Power X-Band Frequency Tripler Using a ...
DOWNLOAD THE FULL PUBLICATION High power, high conversion gain microwave frequency doublers using wide bandgap semiconductor devices are developed. A method of determining the optimal harmonic terminations using accurate nonlinear computer models and load- and source-pull simulations is described. Synthesis of these impedances using matching and reflector networks have […]
High Power, High Conversion Gain Frequency Doublers Using SiC MESFETs ...
DOWNLOAD THE FULL PUBLICATION A complete empirical large-signal model for high-power AlGaN/GaN HEMTs (GaN HEMT) utilizing an improved drain current (Ids) formulation with self-heating and charge-trapping modifications is presented. The new drain current equation accurately models the asymmetric bell-shaped transconductance (gm) for high Ids over a large range of […]
A Wideband Multiharmonic Empirical Large-Signal Model for High-Power GaN HEMTs ...
DOWNLOAD THE FULL PUBLICATION A new empirical large-signal model for high-power GaN HEMTs utilizing an improved drain current (Ids) model is presented. The new Ids formulation accurately predicts the asymmetric bell-shaped transconductance (gm) over a large drain-source bias range which is crucial in modeling high-power GaN HEMTs. A method […]
An Improved Empirical Large-Signal Model for High-Power GaN HEMTs Including ...
DOWNLOAD THE FULL PUBLICATION An empirical large-signal model for high-power microwave silicon-carbide MESFETs capable of predicting self-heating thermal behavior is presented. A generalized drain-current equation based on pulsed-gate IV characteristics measuring up to 2 A and 58 V is presented along with its dependence on temperature. A thermal subcircuit […]
An Empirical Large-Signal Model for SiC MESFETs with Self-Heating Thermal ...
DOWNLOAD THE FULL PUBLICATION A new, simplified empirical large-signal model for high power microwave SiC MESFETs is presented. A generalized drain current source equation is developed, allowing close predictions of both pulsed and static IV characteristics, which vary significantly due to current dispersion. The drain current source is based […]