A Simplified, Empirical Large-Signal Model for SiC MESFETs
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A new, simplified empirical large-signal model for high power microwave SiC MESFETs is presented. A generalized drain current source equation is developed, allowing close predictions of both pulsed and static IV characteristics, which vary significantly due to current dispersion. The drain current source is based on pulsed IV measurements and accurately predicts the gm and gds without supplemental RF current source generators as typically used in other models. The model is shown to accurately predict the output and input reflected power over an available power range of +10dBm to +36dBm for three harmonics while maintaining the ability to compute the small-signal S-parameters.